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Транзистор inn650d02 inno inn0 650d02 package dfa 8*8mm

137 грн
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Тип обладнання: Транзистори

Транзистор INN650D02 inno inn0 650D02 Package DFA 8*8mm
INN650D02 650 V Enhancement-Mode GaN Power FET Power
INN650D02, a 650 V, 200 mΩ, normally on, gallium nitride (GaN) power FET. The device uses a high-voltage power GaN high electron mobility transistor (HEMT). The INN650D02 was found by TechInsights in the DongGuan RuiHeng Electronic RH-PD65W 65 W GaN charger.